Characterizing SiC MOSFET Switching Losses with Double Pulse Test (DPT)

Switching losses in power switching devices refer to the energy lost during the transition periods when the device turns on and off. To measure these losses, the Double Pulse Test (DPT) platform is commonly employed. DPT is particularly useful for evaluating the switching energy and reverse recovery characteristics of power devices, such as SiC MOSFETs, Si MOSFETs, and IGBT switching losses, including Microchip’s mSiC™ MOSFET family. By using DPT, engineers can obtain precise measurements that help in accurately predicting the total switching losses in a design.